IPB022N04L G Infineon Technologies, IPB022N04L G Datasheet - Page 7

• Manufacturer Part Number: IPB022N04L G
• Description: MOSFET N-CH 40V 90A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB022N04L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2V @ 95µA
• Gate Charge (qg) @ Vgs: 166nC @ 10V
• Input Capacitance (ciss) @ Vds: 13000pF @ 20V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 1.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0022 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000391497

Rev. 1.2
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
1000
100
10
45
40
35
30
25
20
AV
1
10
-60
=f(T
); R
-1
j
GS
); I
j(start)
=25 W
-20
D
=1 mA
10
0
20
t
150 °C
T
AV
j
10
60
[° C]
[µs]
1
100
100 ° C
10
2
140
25 ° C
180
10
page 7
3
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=30 A pulsed
g s
40
Q
Q
gate
g
Q
80
[nC]
sw
Q
g d
8 V
IPB022N04L G
120
32 V
20 V
Q
g ate
2009-12-11
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