IPB022N04L G Infineon Technologies, IPB022N04L G Datasheet - Page 3

• Manufacturer Part Number: IPB022N04L G
• Description: MOSFET N-CH 40V 90A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB022N04L G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 2V @ 95µA
• Gate Charge (qg) @ Vgs: 166nC @ 10V
• Input Capacitance (ciss) @ Vds: 13000pF @ 20V
• Power - Max: 167W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 1.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0022 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 A
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000391497

Rev. 1.2
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
See figure 16 for gate charge parameter definition
5)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
Q
Q
I
I
V
Q
d(on)
r
d(off)
f
S
S,pulse
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
g
g(sync)
oss
rr
V
f =1 MHz
V
I
V
V
V
V
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DD
GS
DS
GS
DD
GS
R
=30 A, R
=25 ° C
F
=25 °C
=20 V, I
/dt =400 A/µs
=0 V, V
=20 V, V
=20 V, I
=0 to 10 V
=20 V, I
=0 to 4.5 V
=0.1 V,
=0 to 10 V
=20 V, V
=0 V, I
F
F
G
DS
=90 A,
=I
D
D
=1.6 W
GS
GS
=30 A,
=30 A,
=20 V,
S
=10 V,
=0 V
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
9900
2000
0.89
typ.
120
125
117
2.9
17
66
11
28
16
13
25
60
85
95
9
-
-
IPB022N04L G
13000 pF
max.
2700
166
400
1.2
80
90
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
nC
V
nC
A
V
nC
2009-12-11