BSO201SP H Infineon Technologies, BSO201SP H Datasheet - Page 7

• Manufacturer Part Number: BSO201SP H
• Description: MOSFET P-CH 20V 12A 8SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO201SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9600pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 8.0 mOhm
• Rds (on) (max) (@2.5v): 12.9 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.32
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
0.1
22.5
21.5
20.5
19.5
18.5
10
AV
1
23
22
21
20
19
18
=f(T
); R
1
-60
j
GS
); I
j(start)
=25 Ω
D
-20
=0.25 mA
10
20
t
AV
T
j
60
[µs]
[°C]
100
100
125 °C
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
10
Q
V
9
8
7
6
5
4
3
2
1
0
V
g(th)
g s(th)
0
GS
gate
); I
DD
20
Q
D
=-14.9 A pulsed
g s
40
- Q
60
Q
g
gate
Q
4 V
sw
[nC]
Q
80
10 V
g d
16 V
100
BSO201SP H
120
Q
g ate
2009-12-21
140