BSO201SP H Infineon Technologies, BSO201SP H Datasheet - Page 3

• Manufacturer Part Number: BSO201SP H
• Description: MOSFET P-CH 20V 12A 8SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO201SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9600pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 8.0 mOhm
• Rds (on) (max) (@2.5v): 12.9 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.32
4)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
4)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
g(th)
gd
sw
g
oss
rr
V
f =1 MHz
V
V
14.9 A, R
V
14.9 A, V
V
T
V
T
V
di
V
di
page 3
A
j
GS
DD
GS
DD
DD
GS
R
R
=25 °C
F
F
=25 °C
=10 V, I
=10 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=-10 V,
=4.5 V, I
=-10 V, I
=-10 V, V
=0 V, I
GS
G
=1.6 Ω
F
F
F
DS
=0 to 4.5 V
=-14.9 A,
=I
=I
D
D
=15 V,
=-
GS
=-
S
S
,
,
=0 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
6400
2100
1700
typ.
162
-1.5
-10
-23
-26
-66
21
99
99
38
-6
-
-
-
-
-
BSO201SP H
max.
-59.6
9600
3150
2550
-3.7
149
149
243
109
-15
-16
-39
-38
-88
1.2
32
51
95
-
Unit
pF
ns
nC
V
nC
A
V
ns
nC
2009-12-21