BSO201SP H Infineon Technologies, BSO201SP H Datasheet - Page 5

• Manufacturer Part Number: BSO201SP H
• Description: MOSFET P-CH 20V 12A 8SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO201SP H

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 14.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9600pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Package: SO-8
• Vds (max): -20.0 V
• Rds (on) (max) (@10v): -
• Rds (on) (max) (@4.5v): 8.0 mOhm
• Rds (on) (max) (@2.5v): 12.9 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev.1.32
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
90
80
70
60
50
40
30
20
10
35
30
25
20
15
10
5
0
0
DS
GS
0.0
0
); T
); |V
j
4.5 V
=25 °C
j
GS
DS
3.0V
|>2|I
0.5
2.5 V
1
D
|R
1.0
DS(on)max
- V
- V
150 °C
GS
DS
2
[V]
[V]
1.5
25°C
3
1.5 V
2.0
2.0V
1.8 V
2.5
page 5
4
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
120
100
80
60
40
20
0
D
=f(I
15
14
13
12
11
10
); T
9
8
7
6
5
4
3
2
1
0
0
0
D
j
); T
=25 °C
GS
5
j
=25 °C
10
10
20
15
I
- I
D
20
30
D
[A]
[A]
25
40
BSO201SP H
30
2.0 V
2.2 V
50
3.0 V
4.5 V
35
2.5 V
10 V
2009-12-21
60
40