IPD90N06S4-07 Infineon Technologies, IPD90N06S4-07 Datasheet - Page 6

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IPD90N06S4-07

Manufacturer Part Number
IPD90N06S4-07
Description
MOSFET N-CH 60V 90A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD90N06S4-07

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.9 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 40µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
79W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
IPD90N06S4-07
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD90N06S4-07
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Company:
Part Number:
IPD90N06S4-07
Quantity:
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Rev. 1.0
9 Typ. gate threshold voltage
V
parameter: I
11 Typical forward diode characteristicis
IF = f(V
parameter: T
GS(th)
10
10
10
10
10
10
10
10
3.5
2.5
1.5
= f(T
4
3
2
3
3
2
2
1
1
0
0
SD
-60
0
0
)
j
); V
D
j
0.2
0.2
-20
GS
= V
0.4
0.4
20
DS
40 µA
175 °C
175 °C
0.6
0.6
V
V
T
SD
SD
j
60
[°C]
[V]
[V]
25 °C
25 °C
0.8
0.8
400 µA
100
1
1
140
1.2
1.2
180
1.4
1.4
page 6
10 Typ. capacitances
C = f(V
12 Avalanche characteristics
I
parameter: T
A S
= f(t
100
0.1
10
10
10
10
10
1
4
3
2
1
0.1
AV
DS
0
)
); V
j(start)
GS
5
= 0 V; f = 1 MHz
1
10
t
V
AV
150 °C
DS
10
15
[µs]
[V]
100 °C
IPD90N06S4-07
20
25 °C
100
25
2009-03-24
Coss
Crss
Ciss
1000
30

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