IPD90N06S4-07 Infineon Technologies, IPD90N06S4-07 Datasheet - Page 3

• Manufacturer Part Number: IPD90N06S4-07
• Description: MOSFET N-CH 60V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD90N06S4-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.9 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 40µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
1)
2)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Specified by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
1)
1)
1)
1)
1)
1)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1MHz
V
I
V
V
T
V
T
V
di
D
C
j
GS
DD
DD
GS
GS
R
=90A, R
=25°C
F
page 3
=25°C
=30V, I
/dt =100A/µs
=0V, V
=30V, V
=48V, I
=0 to 10V
=0V, I
Conditions
F
F
G
DS
=90A,
2
=90A,
D
=3.5
GS
=90A,
(one layer, 70 µm thick) copper area for drain
=25V,
=10V,
min.
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
3460
0.95
typ.
850
5.5
6.0
35
15
23
21
43
39
38
3
5
-
-
IPD90N06S4-07
max.
4500
1105
360
1.3
70
27
11
56
90
-
-
-
-
-
-
-
2009-03-24
Unit
pF
ns
nC
V
A
V
ns
nC