IPD90N06S4-07 Infineon Technologies, IPD90N06S4-07 Datasheet - Page 5

• Manufacturer Part Number: IPD90N06S4-07
• Description: MOSFET N-CH 60V 90A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD90N06S4-07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.9 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 40µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 79W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
360
320
280
240
200
160
120
360
320
280
240
200
160
120
80
40
80
40
0
0
DS
GS
0
2
); T
); V
GS
j
j
DS
= 25 °C
1
3
= 6V
4
2
V
V
GS
DS
10 V
5
3
[V]
[V]
6
4
-55 °C
7
5
175 °C
25 °C
8 V
6 V
5 V
7 V
page 5
8
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
20
18
16
14
12
10
11
10
8
6
4
9
8
7
6
5
4
= f(I
= f(T
-60
0
5 V
D
j
); T
); I
GS
-20
D
j
= 25 °C
= 90 A; V
6 V
90
20
GS
T
I
D
180
j
60
= 10 V
[°C]
[A]
7 V
IPD90N06S4-07
100
270
140
2009-03-24
8 V
10 V
360
180