NTD3055-094-1G ON Semiconductor, NTD3055-094-1G Datasheet - Page 3

• Manufacturer Part Number: NTD3055-094-1G
• Description: MOSFET N-CH 60V 12A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD3055-094-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.9V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.094 Ohms
• Forward Transconductance Gfs (max / Min): 6.7 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
24
16
12
20
1.8
1.6
1.4
1.2
0.8
0.6
8
4
0
1
2
0
−50
0
0
V
−25
8 V
V
I
V
D
DS
Figure 1. On−Region Characteristics
Figure 5. On−Resistance Variation with
GS
GS
V
= 6 A
9 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
= 10 V
= 10 V
4
Figure 3. On−Resistance versus
1
T
J
= 10 V
0
, JUNCTION TEMPERATURE (°C)
I
D
Gate−to−Source Voltage
, DRAIN CURRENT (AMPS)
25
8
2
Temperature
50
7 V
12
75
3
T
T
T
J
J
J
= 100°C
= 25°C
= −55°C
100
16
125
4
20
http://onsemi.com
150
6.5 V
5.5 V
4.5 V
6 V
5 V
24
175
5
3
1000
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
100
10
24
20
16
12
1
8
4
0
0
3
0
0
Figure 4. On−Resistance versus Drain Current
V
Figure 6. Drain−to−Source Leakage Current
T
V
GS
J
3.5
V
DS
V
= 100°C
V
GS
DS
= 0 V
GS
≥ 10 V
10
T
Figure 2. Transfer Characteristics
= 15 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
, GATE−TO−SOURCE VOLTAGE (VOLTS)
J
4
= 25°C
I
D
, DRAIN CURRENT (AMPS)
4.5
20
and Gate Voltage
8
T
versus Voltage
J
= −55°C
5
T
T
J
J
= 100°C
= 150°C
5.5
12
30
T
T
6
T
J
J
J
= 100°C
= −55°C
= 25°C
16
40
6.5
7
20
50
7.5
24
60
8