NTD3055-150-1G ON Semiconductor, NTD3055-150-1G Datasheet

MOSFET N-CH 60V 9A IPAK

NTD3055-150-1G

Manufacturer Part Number
NTD3055-150-1G
Description
MOSFET N-CH 60V 9A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD3055-150-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
150 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.122 Ohms
Forward Transconductance Gfs (max / Min)
5.4 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
28.8 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD3055-150-1G
Manufacturer:
ON Semiconductor
Quantity:
135
Part Number:
NTD3055-150-1G
Manufacturer:
ON
Quantity:
12 500
NTD3055-150
Power MOSFET
9.0 A, 60 V, N−Channel DPAK
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 4
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
pad size.
Derate above 25°C
Energy − Starting T
(V
L = 1.0 mH, I
DD
= 25 Vdc, V
− Continuous
− Non−repetitive (t
− Continuous @ T
− Continuous @ T
− Single Pulse (t
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
L
(pk) = 7.75 A, V
Rating
GS
J
= 10 Vdc,
(T
= 25°C
GS
J
p
A
A
= 25°C unless otherwise noted)
v10 ms)
A
A
A
p
= 10 MW)
= 25°C (Note 1)
= 25°C (Note 2)
v10 ms)
= 25°C
= 25°C
= 100°C
DS
= 60 Vdc)
Symbol
T
V
V
R
R
R
J
V
V
E
I
DGR
P
, T
DSS
DM
T
I
I
qJC
qJA
qJA
GS
GS
AS
D
D
D
L
stg
−55 to 175
Value
"20
"30
28.8
0.19
71.4
100
260
9.0
3.0
2.1
1.5
5.2
60
60
27
30
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
Apk
mJ
°C
°C
W
W
W
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1 2
1
2
9.0 AMPERES, 60 VOLTS
3
3
R
ORDERING INFORMATION
DS(on)
3150
Y
WW
G
G
“SURFACE MOUNT”
4
4
“STRAIGHT LEAD”
http://onsemi.com
CASE 369C
CASE 369D
STYLE 2
STYLE 2
DPAK−3
= 122 mW (Typ)
N−Channel
DPAK
= Device Code
= Year
= Work Week
= Pb−Free Package
D
Publication Order Number:
S
Gate
Gate
DIAGRAMS
NTD3055−150/D
MARKING
1
1
Drain
Drain
Drain
Drain
4
2
4
2
3
Source
3
Source

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NTD3055-150-1G Summary of contents

Page 1

... DIAGRAMS 4 Drain 4 DPAK CASE 369C STYLE 2 3 “SURFACE MOUNT” Drain Gate Source 4 Drain 4 DPAK−3 CASE 369D STYLE 2 “STRAIGHT LEAD” Gate Drain Source 3150 = Device Code Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD3055−150/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note Vdc 250 mAdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 ...

Page 4

480 C iss 400 320 C rss 240 160 80 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. ...

Page 5

... ORDERING INFORMATION Device NTD3055−150 NTD3055−150G NTD3055−150−1 NTD3055−150−1G NTD3055−150T4 NTD3055−150T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.001 0.01 t, TIME (s) Figure 13 ...

Page 6

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE C SEATING −T− PLANE SOLDERING FOOTPRINT* 6.20 3.0 0.244 0.118 2 ...

Page 7

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD3055−150/D ...

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