NTD3055-094-1G ON Semiconductor, NTD3055-094-1G Datasheet - Page 2

• Manufacturer Part Number: NTD3055-094-1G
• Description: MOSFET N-CH 60V 12A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD3055-094-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 450pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 94mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.9V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.094 Ohms
• Forward Transconductance Gfs (max / Min): 6.7 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 48 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage (Note 3)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
Static Drain−to−Source On−Voltage (Note 3)
Forward Transconductance (Note 3) (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
GS
= 60 Vdc, V
= 60 Vdc, V
= V
= 0 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
D
= 250 mAdc)
GS
GS
= 6.0 Adc)
= 12 Adc)
= 6.0 Adc, T
= 0 Vdc)
= 0 Vdc, T
Characteristic
GS
J
J
= 150°C)
= 150°C)
= ± 20 Vdc, V
(I
S
V
(I
GS
S
= 12 Adc, V
DS
(T
= 12 Adc, V
(V
(V
(V
(I
dI
= 10 Vdc, R
J
= 7.0 Vdc, I
DS
S
DD
DS
V
S
= 25°C unless otherwise noted)
/dt = 100 A/ms) (Note 3)
GS
= 12 Adc, V
= 25 Vdc, V
= 48 Vdc, I
= 48 Vdc, I
= 10 Vdc) (Note 3)
DS
f = 1.0 MHz)
GS
= 0 Vdc)
GS
= 0 Vdc, T
G
D
= 0 Vdc) (Note 3)
= 9.1 W) (Note 3)
= 6.0 Adc)
GS
http://onsemi.com
D
D
GS
= 12 Adc,
= 12 Adc,
= 0 Vdc,
= 0 Vdc,
J
= 150°C)
2
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
DS(on)
C
V
GS(th)
C
d(on)
d(off)
g
DSS
GSS
Q
Q
Q
t
t
t
FS
oss
t
t
SD
rss
RR
iss
rr
a
b
r
f
T
1
2
Min
2.0
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.047
54.4
0.85
0.77
32.3
25.2
23.9
10.9
0.94
0.82
33.1
Typ
323
107
2.9
6.3
6.7
7.7
3.1
4.2
8.9
68
84
34
24
−
−
−
±100
Max
1.35
1.15
450
150
1.0
4.0
10
94
70
15
70
50
50
20
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mW
nC
mC
pF
ns
ns