NTHS4101PT1G ON Semiconductor, NTHS4101PT1G Datasheet - Page 6

MOSFET P-CH 20V 4.8A CHIPFET

NTHS4101PT1G

Manufacturer Part Number
NTHS4101PT1G
Description
MOSFET P-CH 20V 4.8A CHIPFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTHS4101PT1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
34 mOhm @ 4.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
2100pF @ 16V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
8-ChipFET™
Configuration
Single Hex Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.034 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
15 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
4.8 A
Power Dissipation
1300 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTHS4101PT1GOS
NTHS4101PT1GOS
NTHS4101PT1GOSTR

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