NTHS4101PT1G ON Semiconductor, NTHS4101PT1G Datasheet - Page 2

• Manufacturer Part Number: NTHS4101PT1G
• Description: MOSFET P-CH 20V 4.8A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHS4101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2100pF @ 16V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1300 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHS4101PT1GOS; NTHS4101PT1GOS; NTHS4101PT1GOSTR

2. Pulse Test: Pulse Width = 250 ms, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 3)
Drain−to−Source Breakdown Voltage (Note 2)
Temperature Coefficient (Positive)
Gate−Body Leakage Current Zero
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Static Drain−to−Source On−Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Characteristic
(T
J
= 25°C unless otherwise noted)
V
Symbol
R
V
(Br)DSS
t
t
I
I
C
DS(on)
V
C
GS(th)
g
C
d(on)
d(off)
Q
Q
GSS
DSS
Q
oss
t
FS
SD
t
iss
rss
gd
r
gs
f
g
http://onsemi.com
NTHS4101P
V
V
V
V
V
V
V
V
V
DS
GS
GS
GS
DS
2
I
DS
GS
DS
S
DS
V
= −4.8 A
= 0 V
= −5.0 V
DS
= −4.5 V
= −2.5 V
= −1.8 V
= −16 V
= 0 V
= −16 V
= V
Test Condition
V
V
V
V
= −16 V
I
I
GS
GS
f = 1.0 MHz
D
D
DS
DD
R
GS
V
T
dc
dc
= −4.5 A
G
= −4.5 A
J
GS
, V
= −4.5 V
= −4.5 V
, I
= −16 V
= −16 V
, I
= 85°C
dc
= 2.5 W
dc
dc
dc
dc
dc
dc
D
, V
= 0 V
D
GS
, V
, I
, I
, I
, I
, V
dc
= −250 mA
= −250 mA
D
D
D
D
GS
GS
= "8.0 V
GS
(Note 3)
= −4.8 A
= −4.8 A
= −4.2 A
= −1.0 A
dc
dc
dc
dc
dc
dc
= 0 V
= 0 V
= 0 V
dc
dc
dc
dc
dc
dc
dc
dc
dc
dc
,
−0.45
Min
−20
2100
−0.8
Typ
290
200
8.0
4.0
7.0
21
30
42
15
28
75
60
25
"100
Max
−1.0
−5.0
−1.5
−1.2
34
40
52
35
nA
mA
Unit
mW
V
V
nC
pF
ns
S
V
dc
dc
dc
dc