NTHS4101PT1G ON Semiconductor, NTHS4101PT1G Datasheet - Page 4

• Manufacturer Part Number: NTHS4101PT1G
• Description: MOSFET P-CH 20V 4.8A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHS4101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2100pF @ 16V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1300 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHS4101PT1GOS; NTHS4101PT1GOS; NTHS4101PT1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
100
5000
4500
4000
3500
3000
2500
2000
1500
1000
10
500
1
0
1
−6
Figure 8. Resistive Switching Time Variation
V
I
V
D
DD
GS
V
C
−4
= −4.5 A
DS
rss
t
t
d(off)
d(on)
= −16 V
= −4.5 V
= 0 V
t
−2
t
−V
f
r
R
GS
Figure 6. Capacitance Variation
G
0
, GATE RESISTANCE (OHMS)
vs. Gate Resistance
−V
V
GS
TYPICAL PERFORMANCE CURVES
DS
2
= 0 V
4
10
6
0.01
100
0.1
10
1
8
0.1
C
Figure 10. Maximum Rated Forward Biased
10
V
SINGLE PULSE
T
oss
C
GS
−V
= 25°C
12 14 16 18 20
= −8 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
THERMAL LIMIT
PACKAGE LIMIT
T
C
J
DS(on)
Safe Operating Area
iss
http://onsemi.com
= 25°C
1
NTHS4101P
100
LIMIT
4
(T
Figure 7. Gate−to−Source and Drain−to−Source
J
5
4
3
2
1
0
5
4
3
2
1
0
0.4
0
= 25°C unless otherwise noted)
10
V
T
Q1
Figure 9. Diode Forward Voltage vs. Current
GS
J
−V
3
= 25°C
SD
Voltage vs. Total Gate Charge
= 0 V
0.5
100 ms
10 ms
1 ms
dc
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
6
Q
Q2
g
, TOTAL GATE CHARGE (nC)
0.6
9
100
12
QT
0.7
15
18
0.8
21
I
T
D
J
= −4.5 A
= 25°C
0.9
24
1.0
27