NTHS4101PT1G ON Semiconductor, NTHS4101PT1G Datasheet

NTHS4101PT1G

Manufacturer Part Number

NTHS4101PT1G

Description

MOSFET P-CH 20V 4.8A CHIPFET

Manufacturer

ON Semiconductor

Datasheet

1.NTHS4101PT1G.pdf (6 pages)

Specifications of NTHS4101PT1G

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

34 mOhm @ 4.8A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

4.8A

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

35nC @ 4.5V

Input Capacitance (ciss) @ Vds

2100pF @ 16V

Power - Max

1.3W

Mounting Type

Surface Mount

Package / Case

8-ChipFET™

Configuration

Single Hex Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.034 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

15 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

4.8 A

Power Dissipation

1300 mW

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTHS4101PT1GOS
NTHS4101PT1GOS
NTHS4101PT1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTHS4101PT1G

Manufacturer:

Quantity:

15 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTHS4101PT1G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

NTHS4101PT1G

Company:

H&T Electronics

Part Number:

NTHS4101PT1G

Quantity:

3 000

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NTHS4101P

Power MOSFET

−20 V, 6.7 A, P−Channel ChipFETt

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq

MAXIMUM RATINGS

February, 2007 − Rev. 3

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current − Continuous

Total Power Dissipation

Pulsed Drain Current − t

Continuous Source Current

Thermal Resistance (Note 1)

Maximum Lead Temperature for Soldering

making it an Ideal Device for Applications where Board Space is at a

Premium

Environments such as Portable Electronics

Operating Voltage used in many Logic ICs in Portable Electronics

Voltages are not Required

Migration to Lower Levels using the same Basic Topology

Portable Equipment such as MP3 Players, Cell Phones, Digital

Cameras, Personal Digital Assistant and other Portable Applications

Offers an Ultra Low R

Miniature ChipFET Package 40% Smaller Footprint than TSOP−6

Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin

Designed to Provide Low R

Simplifies Circuit Design since Additional Boost Circuits for Gate

Operated at Standard Logic Level Gate Drive, Facilitating Future

Pb−Free Package is Available

Optimized for Battery and Load Management Applications in

Charge Control in Battery Chargers

Buck and Boost Converters

[1 oz] including traces).

Continuous @ T

(5 sec) @ T

Continuous @ 85°C

(5 sec) @ 85°C

Junction−to−Ambient, 5 sec

Junction−to−Ambient, Continuous

Purposes, 1/8″ from case for 10 seconds

− 5 seconds

= 25°C

Rating

= 25°C

= 10 ms

DS(on)

= 25°C unless otherwise noted)

DS(on)

Solution in the ChipFET Package

at Gate Voltage as Low as 1.8 V, the

Symbol

DSS

qJA

Value

"8.0

−190

−4.8

−6.7

−4.8

−20

260

1.3

2.5

0.7

1.3

°C/W

Unit

V dc

°C

†For information on tape and reel specifications,

NTHS4101PT1

NTHS4101PT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

−20 V

CONNECTIONS

Device

ORDERING INFORMATION

C6 = Specific Device Code

M = Month Code

G = Pb−Free Package

http://onsemi.com

21 mW @ −4.5 V

30 mW @ −2.5 V

42 mW @ −1.8 V

P−Channel MOSFET

(Pb−free)

Package

ChipFET

DS(on)

Publication Order Number:

TYP

CASE 1206A

ChipFET

STYLE 1

3000 Tape / Reel

MARKING

DIAGRAM

Shipping

NTHS4101P/D

−6.7 A

MAX

†

Related parts for NTHS4101PT1G

NTHS4101PT1G Summary of contents

Page 1

... DM Is −4.8 A °C qJA R 95 qJA °C T 260 L NTHS4101PT1 NTHS4101PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on −4 −2.5 V −6 −1.8 V ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate−Body Leakage Current Zero Zero Gate Voltage Drain Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain−to−Source On−Resistance Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input ...

Page 3

TYPICAL PERFORMANCE CURVES − −2 −1 −1 −1 −1 −V , DRAIN−TO−SOURCE VOLTAGE ...

Page 4

TYPICAL PERFORMANCE CURVES 5000 4500 4000 3500 3000 2500 C rss 2000 1500 1000 C 500 0 −6 −4 − −V − GATE−TO−SOURCE ...

Page 5

... Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTHS4101P PACKAGE DIMENSIONS ChipFETt CASE 1206A−03 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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