NTHS4101PT1G ON Semiconductor, NTHS4101PT1G Datasheet
NTHS4101PT1G
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NTHS4101PT1GOS
NTHS4101PT1GOSTR
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NTHS4101PT1G Summary of contents
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... DM Is −4.8 A °C qJA R 95 qJA °C T 260 L NTHS4101PT1 NTHS4101PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DS(on −4 −2.5 V −6 −1.8 V ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 2) Temperature Coefficient (Positive) Gate−Body Leakage Current Zero Zero Gate Voltage Drain Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain−to−Source On−Resistance Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input ...
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TYPICAL PERFORMANCE CURVES − −2 −1 −1 −1 −1 −V , DRAIN−TO−SOURCE VOLTAGE ...
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TYPICAL PERFORMANCE CURVES 5000 4500 4000 3500 3000 2500 C rss 2000 1500 1000 C 500 0 −6 −4 − −V − GATE−TO−SOURCE ...
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... Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTHS4101P PACKAGE DIMENSIONS ChipFETt CASE 1206A−03 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...