BSV236SP L6327 Infineon Technologies, BSV236SP L6327 Datasheet - Page 7

• Manufacturer Part Number: BSV236SP L6327
• Description: MOSFET P-CH 20V 1.5A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSV236SP L6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 175 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.2V @ 8µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 228pF @ 15V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.175 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSV2365P L6327; BSV236SP; BSV236SPINTR; BSV236SPL6327XT; BSV236SPXT; BSV236SPXTINTR; BSV236SPXTINTR; SP000245421

13 Typ. avalanche energy
E
V
15 Drain-source breakdown voltage
V
AS
DD
(BR)DSS
Rev 1.3
-24.5
-23.5
-22.5
-21.5
-20.5
-19.5
-18.5
mJ
= f (T
-23
-22
-21
-20
-19
-18
= -10 V, R
V
10
8
7
6
5
4
3
2
1
0
-60
25
BSV 236SP
j
= f (T
), par.: I
-20
50
GS
j
)
20
D
= 25
= -1.5 A
75
60
100
100
°C
°C
T
T
j
j
180
150
Page 7
14 Typ. gate charge
|V
parameter: I
GS
| = f (Q
V
12
10
9
8
7
6
5
4
3
2
1
0
0
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
1
Gate
D
= -1.5 A pulsed
2
)
3
4
5
BSV 236SP
2006-12-04
6
nC
|Q Gate |
8