BSV236SP L6327 Infineon Technologies, BSV236SP L6327 Datasheet - Page 4

• Manufacturer Part Number: BSV236SP L6327
• Description: MOSFET P-CH 20V 1.5A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSV236SP L6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 175 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.2V @ 8µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 228pF @ 15V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.175 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSV2365P L6327; BSV236SP; BSV236SPINTR; BSV236SPL6327XT; BSV236SPXT; BSV236SPXTINTR; BSV236SPXTINTR; SP000245421

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
Rev 1.3
= f ( V
-10
-10
-10
-10
= f (T
W
1.3
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
A
-1
-2
1
0
1
0
-10
0
BSV 236SP
BSV 236SP
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
DC
120
1
t p = 45.0µs
100 µs
1 ms
10 ms
°C
V
T
V
A
DS
160
-10
Page 4
2
2 Drain current
I
parameter: |V
4 Transient thermal impedance
Z
parameter : D = t
D
thJS
= f (T
K/W
10
10
10
-1.6
-1.2
-0.8
-0.6
-0.4
-0.2
10
10
10
A
-1
= f (t
-1
-2
-3
0
2
1
0
10
0
A
BSV 236SP
BSV 236SP
-7
)
p
20
10
)
single pulse
-6
GS
40
10
| 4.5 V
p
/T
-5
60
10
-4
80
10
100
-3
BSV 236SP
10
2006-12-04
120
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0