BSV236SP L6327 Infineon Technologies, BSV236SP L6327 Datasheet - Page 2

• Manufacturer Part Number: BSV236SP L6327
• Description: MOSFET P-CH 20V 1.5A SOT-363
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSV236SP L6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 175 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.2V @ 8µA
• Gate Charge (qg) @ Vgs: 5.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 228pF @ 15V
• Power - Max: 560mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.175 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 560 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSV2365P L6327; BSV236SP; BSV236SPINTR; BSV236SPL6327XT; BSV236SPXT; BSV236SPXTINTR; BSV236SPXTINTR; SP000245421

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Drain-source on-state resistance
V
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t 10 sec.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
Rev 1.3
GS
DS
DS
GS
GS
GS
=-8µA
=-20V, V
=-20V, V
=0, I
=-12V, V
=-2.5V, I
=-4.5, I
2
D
cooling area
=-250µA
D
GS
GS
D
=-1.5A
DS
=-0.8A
=0, T
=0, T
=0
j
j
=25°C
=150°C
1)
GS
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJS
thJA
min.
min.
-0.6
-20
-
-
-
-
-
-
-
-
Values
Values
-0.1
typ.
-0.9
-10
193
131
typ.
-10
-
-
-
-
max.
BSV 236SP
max.
-100
-100
220
110
-1.2
285
175
90
2006-12-04
-1
-
Unit
V
µA
nA
m
Unit
K/W