NTS4101PT1G ON Semiconductor, NTS4101PT1G Datasheet - Page 4
![MOSFET P-CH 20V 1.37A SOT-323](/photos/5/30/53065/sc___70_sot___323__419___04_sml.jpg)
NTS4101PT1G
Manufacturer Part Number
NTS4101PT1G
Description
MOSFET P-CH 20V 1.37A SOT-323
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTS4101PT1G.pdf
(5 pages)
Specifications of NTS4101PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.37A
Vgs(th) (max) @ Id
1.5V @ 100µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
840pF @ 20V
Power - Max
329mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.37 A
Power Dissipation
329 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.12Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTS4101PT1GOSTR
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Manufacturer
Quantity
Price
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5
4
3
2
1
0
Figure 7. Gate−to−Source and Drain−to−Source
0
Q
1
Voltage versus Total Charge
Q
Q
2
2
g
, TOTAL GATE CHARGE (nC)
Q
T
4
V
GS
6
TYPICAL CHARACTERISTICS
I
T
D
J
= −1.0 A
= 25°C
http://onsemi.com
8
4
3
2
1
0
0
V
GS
Figure 8. Diode Forward Voltage versus
−V
= 0 V
SD
0.2
, SOURCE−TO−DRAIN VOLTAGE (V)
T
J
= 125°C
0.4
Current
0.6
T
J
= 25°C
0.8
1