NTS4101PT1G ON Semiconductor, NTS4101PT1G Datasheet - Page 2

• Manufacturer Part Number: NTS4101PT1G
• Description: MOSFET P-CH 20V 1.37A SOT-323
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTS4101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.37A
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 840pF @ 20V
• Power - Max: 329mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.37 A
• Power Dissipation: 329 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.12Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTS4101PT1GOSTR

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
Temperature Coefficient
Parameter
V
(T
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
J
Q
t
(BR)DSS
=25°C unless otherwise stated)
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
Q
DS(on)
G
d(ON)
V
DSS
GSS
G(TH)
t
OSS
RSS
T
T
RR
ISS
t
t
GS
GD
SD
RR
FS
r
f
a
b
/T
/T
J
J
V
V
V
GS
http://onsemi.com
V
V
GS
GS
V
V
V
V
V
V
I
V
V
I
S
DS
V
GS
GS
GS
GS
DS
D
GS
GS
= 0 V, dI
GS
GS
= −0.3 A
DS
= −4.5 V, V
= −4.5 V, V
= −1.0 A, R
= −16 V
= −5.0 V, I
Test Condition
= V
= −4.5 V, I
= −3.6 V, I
= −2.5 V, I
= 0 V,
= 0 V,
= 0 V, I
= 0 V, f = 1.0 MHz,
= 0 V, V
V
I
I
DS
D
S
DS
2
= −1.0 A
= −1.0 A
SD
, I
= −20 V
D
D
/dt = 100 A/ms,
GS
DD
= −250 mA
DS
= −250 mA
G
D
D
D
D
= −1.0 A
= −0.7 A
= −0.3 A
= −1.3 A
= 6.2 W
= ±8 V
= −4.5 V,
= −4.0 V,
T
T
T
T
J
J
J
J
= 125°C
= 25°C
= 70°C
= 25°C
−0.45
Min
−20
−24.5
−13.7
−0.64
−0.61
14.9
−0.5
10.9
4.25
Typ
104
603
2.7
5.2
6.4
0.7
1.0
1.5
6.2
7.1
3.8
83
88
90
62
26
18
±100
Max
−1.0
−5.0
−1.5
−1.2
120
130
160
840
125
9.0
85
12
25
40
30
20
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
V
V
S
V