NTS4101PT1G ON Semiconductor, NTS4101PT1G Datasheet - Page 2
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NTS4101PT1G
Manufacturer Part Number
NTS4101PT1G
Description
MOSFET P-CH 20V 1.37A SOT-323
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTS4101PT1G.pdf
(5 pages)
Specifications of NTS4101PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.37A
Vgs(th) (max) @ Id
1.5V @ 100µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
840pF @ 20V
Power - Max
329mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.37 A
Power Dissipation
329 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.12Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTS4101PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTS4101PT1G
Manufacturer:
VISHAY
Quantity:
12 000
Company:
Part Number:
NTS4101PT1G
Manufacturer:
ON
Quantity:
54 000
Company:
Part Number:
NTS4101PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTS4101PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
Temperature Coefficient
Parameter
V
(T
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
J
Q
t
(BR)DSS
=25°C unless otherwise stated)
C
C
t
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
Q
DS(on)
G
d(ON)
V
DSS
GSS
G(TH)
t
OSS
RSS
T
T
RR
ISS
t
t
GS
GD
SD
RR
FS
r
f
a
b
/T
/T
J
J
V
V
V
GS
http://onsemi.com
V
V
GS
GS
V
V
V
V
V
V
I
V
V
I
S
DS
V
GS
GS
GS
GS
DS
D
GS
GS
= 0 V, dI
GS
GS
= −0.3 A
DS
= −4.5 V, V
= −4.5 V, V
= −1.0 A, R
= −16 V
= −5.0 V, I
Test Condition
= V
= −4.5 V, I
= −3.6 V, I
= −2.5 V, I
= 0 V,
= 0 V,
= 0 V, I
= 0 V, f = 1.0 MHz,
= 0 V, V
V
I
I
DS
D
S
DS
2
= −1.0 A
= −1.0 A
SD
, I
= −20 V
D
D
/dt = 100 A/ms,
GS
DD
= −250 mA
DS
= −250 mA
G
D
D
D
D
= −1.0 A
= −0.7 A
= −0.3 A
= −1.3 A
= 6.2 W
= ±8 V
= −4.5 V,
= −4.0 V,
T
T
T
T
J
J
J
J
= 125°C
= 25°C
= 70°C
= 25°C
−0.45
Min
−20
−24.5
−13.7
−0.64
−0.61
14.9
−0.5
10.9
4.25
Typ
104
603
2.7
5.2
6.4
0.7
1.0
1.5
6.2
7.1
3.8
83
88
90
62
26
18
±100
Max
−1.0
−5.0
−1.5
−1.2
120
130
160
840
125
9.0
85
12
25
40
30
20
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
V
V
S
V