NTS4101PT1G ON Semiconductor, NTS4101PT1G Datasheet
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NTS4101PT1G
Specifications of NTS4101PT1G
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NTS4101PT1G Summary of contents
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... Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. Device NTS4101PT1 NTS4101PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...
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−4 −3.5 V −3 −2.5 V −2 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0. −4.5 V ...
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TOTAL GATE CHARGE (nC) g Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge TYPICAL CHARACTERISTICS ...
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... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...