NTS4101PT1G ON Semiconductor, NTS4101PT1G Datasheet - Page 3

• Manufacturer Part Number: NTS4101PT1G
• Description: MOSFET P-CH 20V 1.37A SOT-323
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTS4101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.37A
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 840pF @ 20V
• Power - Max: 329mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 1.37 A
• Power Dissipation: 329 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.12Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±8V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTS4101PT1GOSTR

0.16
0.12
0.08
0.04
6
5
4
3
2
1
0
1.5
1.3
1.1
0.9
0.7
0
−50
0
0
Figure 3. On−Resistance versus Drain Current
I
V
V
D
GS
GS
= −1.0 A
−25
Figure 5. On−Resistance Variation with
−V
= −4.5 V
= −4.5 V
Figure 1. On−Region Characteristics
−3.0 V
−2.5 V
−3.5 V
−2.2 V
DS
1
T
V
, DRAIN−TO−SOURCE VOLTAGE (V)
J
GS
2
, JUNCTION TEMPERATURE (°C)
0
−I
= −4.5 V
D
, DRAIN CURRENT (A)
and Temperature
2
25
Temperature
T
T
T
J
J
J
4
50
= 25°C
= −55°C
= 125°C
3
−2.0 V
75
4
TYPICAL CHARACTERISTICS
100
6
T
J
5
= 25°C
−1.0 V
125
−1.6 V
−1.4 V
−1.2 V
http://onsemi.com
−1.8 V
8
150
6
3
1000
0.16
0.12
0.08
0.04
800
600
400
200
0
6
5
4
3
2
1
0
0
0
0
0
Figure 4. On−Resistance versus Drain Current
V
C
GS
V
RSS
C
DS
C
ISS
= −3.6 V
OSS
−V
w −10 V
0.4
Figure 2. Transfer Characteristics
−DRAIN−TO−SOURCE VOLTAGE (V)
1
Figure 6. Capacitance Variation
4
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
−I
J
D
= 125°C
0.8
, DRAIN CURRENT (A)
and Temperature
2
8
T
T
T
J
J
J
1.2
= 125°C
= 25°C
= −55°C
3
12
T
J
= −55°C
1.6
T
4
J
= 25°C
T
V
16
J
GS
2.0
= 25°C
5
= 0 V
2.4
20
6