NTS4101PT1G ON Semiconductor, NTS4101PT1G Datasheet - Page 3
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NTS4101PT1G
Manufacturer Part Number
NTS4101PT1G
Description
MOSFET P-CH 20V 1.37A SOT-323
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTS4101PT1G.pdf
(5 pages)
Specifications of NTS4101PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 1A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1.37A
Vgs(th) (max) @ Id
1.5V @ 100µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Input Capacitance (ciss) @ Vds
840pF @ 20V
Power - Max
329mW
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.12 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.37 A
Power Dissipation
329 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.12Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SC-70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTS4101PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTS4101PT1G
Manufacturer:
VISHAY
Quantity:
12 000
Company:
Part Number:
NTS4101PT1G
Manufacturer:
ON
Quantity:
54 000
Company:
Part Number:
NTS4101PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTS4101PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.16
0.12
0.08
0.04
6
5
4
3
2
1
0
1.5
1.3
1.1
0.9
0.7
0
−50
0
0
Figure 3. On−Resistance versus Drain Current
I
V
V
D
GS
GS
= −1.0 A
−25
Figure 5. On−Resistance Variation with
−V
= −4.5 V
= −4.5 V
Figure 1. On−Region Characteristics
−3.0 V
−2.5 V
−3.5 V
−2.2 V
DS
1
T
V
, DRAIN−TO−SOURCE VOLTAGE (V)
J
GS
2
, JUNCTION TEMPERATURE (°C)
0
−I
= −4.5 V
D
, DRAIN CURRENT (A)
and Temperature
2
25
Temperature
T
T
T
J
J
J
4
50
= 25°C
= −55°C
= 125°C
3
−2.0 V
75
4
TYPICAL CHARACTERISTICS
100
6
T
J
5
= 25°C
−1.0 V
125
−1.6 V
−1.4 V
−1.2 V
http://onsemi.com
−1.8 V
8
150
6
3
1000
0.16
0.12
0.08
0.04
800
600
400
200
0
6
5
4
3
2
1
0
0
0
0
0
Figure 4. On−Resistance versus Drain Current
V
C
GS
V
RSS
C
DS
C
ISS
= −3.6 V
OSS
−V
w −10 V
0.4
Figure 2. Transfer Characteristics
−DRAIN−TO−SOURCE VOLTAGE (V)
1
Figure 6. Capacitance Variation
4
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
−I
J
D
= 125°C
0.8
, DRAIN CURRENT (A)
and Temperature
2
8
T
T
T
J
J
J
1.2
= 125°C
= 25°C
= −55°C
3
12
T
J
= −55°C
1.6
T
4
J
= 25°C
T
V
16
J
GS
2.0
= 25°C
5
= 0 V
2.4
20
6