2SK3437(Q) Toshiba, 2SK3437(Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK3437(Q)
• Description: MOSFET N-CH 600V 10A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3437(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
1
1
*
Curves must be derated
linearly with increase in
temperature.
I D max (pulsed) *
I D max (continuous)
Single nonrepetitive pulse
Tc = 25°C
Drain-source voltage V
DC operation
0.001
Safe operating area
0.01
Tc = 25°C
10
0.1
10
10 μ
1
0.1
Duty = 0.5
0.2
0.02
0.05
0.01
1 ms *
100 μ
100
DS
V DSS max
Single pulse
(V)
100 μs *
1 m
1000
Pulse width t
r
th
10 m
5
− t
R
V
w
DD
G
w
= 25 Ω
= 90 V, L = 4.41 mH
(s)
400
300
200
100
−15 V
0
15 V
25
100 m
Test circuit
P DM
Channel temperature (initial) T
50
Duty = t/T
R th (ch-a) = 83.3°C/W
t
1
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
1
2
Waveform
VDSS
I
⋅
AR
L
10
⋅
2 I
ch
⋅
125
⎛
⎜
⎜
⎝
B VDSS
(°C)
V
DS
B VDSS
2010-01-29
2SK3437
150
−
V DD
⎞
⎟
⎟
⎠