2SK3437(Q) Toshiba, 2SK3437(Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3437(Q)
• Description: MOSFET N-CH 600V 10A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3437(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
100
2.5
2.0
1.5
1.0
0.5
10
80
60
40
20
0
−80
1
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Tc = 25°C
Common source
V GS = 10 V
Pulse test
−40
Drain-source Voltage V
40
Case temperature Tc (°C)
Case temperature Tc (°C)
1
Capacitance – V
0
R
80
DS (ON)
P
D
40
10
– Tc
– Tc
120
80
DS
DS
I D = 10 A
100
160
C oss
C iss
C rss
(V)
120
5
2.5
1000
160
200
4
100
500
400
300
200
100
0.1
10
−80
1
6
5
4
3
2
1
0
0
0
0
Common source
Tc = 25°C
Pulse test
10
Dynamic input/output characteristics
−0.2
−40
Drain-source voltage V
Total gate charge Q
Case temperature Tc (°C)
5
10
V DS
−0.4
0
3
I
DR
V GS
V
th
1
V DD = 100 V
−0.6
– V
40
20
– Tc
DS
V GS = 0, −1 V
−0.8
80
g
Common source
I D = 10 A
Tc = 25°C
Pulse test
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
400
(nC)
30
(V)
120
−1
200
2010-01-29
2SK3437
−1.2
160
40
20
16
12
8
4
0