2sk3437 TOSHIBA Semiconductor CORPORATION, 2sk3437 Datasheet

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2sk3437

Manufacturer Part Number
2sk3437
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK3437
Manufacturer:
TOSHIBAHIBA
Quantity:
12 500
DC-DC Converter, Relay Drive and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: Pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
I
temperature
AR
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
= 10 A
= 90 V, T
GS
= 20 kΩ)
DC (Note 1)
Pulse
ch
DSS
th
= 25°C (initial), L = 4.41 mH, R
= 3.0~5.0 V (V
(Note 1)
(Note 2)
= 100 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
DS
| = 4.5 S (typ.)
AS
AR
stg
D
ch
R
R
D
2SK3437
Symbol
th (ch-a)
th (ch-c)
= 10 V, I
= 0.74 Ω (typ.)
DS
= 600 V)
−55~150
D
Rating
600
600
±30
252
150
= 1 mA)
10
30
80
10
8
1
G
Max
1.56
83.3
= 25 Ω,
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
V
V
V
A
A
Unit
Weight: 1.5 g (typ.)
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-10S1B
2-10S2B
2006-11-08
2SK3437
Unit: mm

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2sk3437 Summary of contents

Page 1

... D E 252 150 °C ch −55~150 T °C stg Symbol Max Unit R 1.56 °C/W th (ch-c) R 83.3 °C/W th (ch- Ω 2SK3437 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2006-11-08 ...

Page 2

... Test Condition I ⎯ ⎯ DRP = DSF /dt = 100 A/μ 2SK3437 Min Typ. Max ⎯ ⎯ ±10 ±30 ⎯ ⎯ ⎯ ⎯ 100 ⎯ ⎯ 600 ⎯ 3.0 5.0 ⎯ 0.74 1.0 ⎯ 2.0 4.5 ⎯ ⎯ ...

Page 3

... Drain-source voltage Gate-source voltage V 100 Common source Tc = 25°C Pulse test 10 1 0.1 100 0.1 3 2SK3437 I – 8.5 8.0 7.5 7.25 7 – Common source Tc = 25°C Pulse test 2 ...

Page 4

... C oss rss 0 −80 −40 Channel temperature Tc (°C) 1000 (V) Dynamic input/output characteristics 500 400 300 200 100 0 200 0 4 2SK3437 I – − −0.4 −0.6 −0.8 −1 −1.2 ( – Common source ...

Page 5

... Pulse width t (S) w 400 300 100 μs * 200 100 Channel temperature (initial 1000 −15 V Test circuit = 25 Ω 4. 2SK3437 – 100 125 150 (° VDSS Wave form ⎛ ⎞ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3437 20070701-EN 2006-11-08 ...

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