2SK3437(Q) Toshiba, 2SK3437(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3437(Q)
• Description: MOSFET N-CH 600V 10A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3437(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.1
10
12
10
10
8
6
4
2
0
8
6
4
2
0
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Common source
V DS = 20 V
Pulse test
Drain-source voltage V
Gate-source voltage V
4
2
Drain current I
Tc = −55°C
1
15
8
4
⎪Y
I
I
D
D
fs
– V
– V
100
10
25
⎪ – I
DS
GS
12
D
6
D
100
10
GS
DS
(A)
25
Tc = −55°C
V GS = 6.0 V
16
8
(V)
(V)
7.75
7.25
6.75
7.5
7.0
6.5
100
20
10
3
100
0.1
20
16
12
20
16
12
10
8
4
0
8
4
0
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
Drain-source voltage V
Gate-source voltage V
10
4
Drain current I
1
R
20
V
DS (ON)
8
I
DS
D
V GS = 10, 15 V
– V
15
– V
DS
GS
– I
30
12
D
D
8.5
10
10
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
6.5
8.0
I D = 10 A
V GS = 6.0 V
40
16
(V)
(V)
7.5
2.5
5
7.25
2010-01-29
7.0
2SK3437
100
50
20