2SK3757(Q) Toshiba, 2SK3757(Q) Datasheet - Page 5

• Manufacturer Part Number: 2SK3757(Q)
• Description: MOSFET N-CH 450V 2A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3757(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.45 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.45 Ohm @10V
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 30 W
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.03
0.01
0.3
0.1
10
3
1
1
I D max (CONTINUOUS)
I D max (PULSE) *
* SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
increase in temperature
DRAIN−SOURCE VOLTAGE V
SAFE OPERATING AREA
0.003
0.03
0.01
0.3
0.1
10 μ
3
1
DC OPERATION
10
0.01
0.05
0.02
Tc = 25°C
0.1
0.2
Duty = 0.5
SINGLE PULSE
100 μ
100
V DSS max
1 ms *
DS
100 μs *
(V)
1 m
1000
PULSE WIDTH t
r
th
10 m
– t
5
w
R
V
DD
w
G
= 25 Ω
(S)
= 90 V, L = 42.8 mH
200
160
120
80
40
−15 V
100 m
0
25
15 V
CHANNEL TEMPERATURE (INITIAL) T
P DM
TEST CIRCUIT
Duty = t/T
R th (ch-c) = 4.17°C/W
50
t
1
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
WAVE FORM
B
10
2
1
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
B VDSS
ch
V
DS
2009-09-29
B VDSS
2SK3757
(°C)
150
−
V DD
⎞
⎟
⎟
⎠