2SK3757(Q) Toshiba, 2SK3757(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3757(Q)
• Description: MOSFET N-CH 450V 2A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3757(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.45 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.45 Ohm @10V
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 30 W
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.6
1.2
0.8
0.4
10.0
5
4
3
2
1
0
1.0
0.1
2
0
0
COMMON SOURCE
V
PULSE TEST
0
0.1
ＤＳ
COMMON
SOURCE
T
PULSE TEST
Ｃ
= 20V
COMMON SOURCE
V
PULSE TEST
= 25℃
ＤＳ
= 20V
10
DRAIN−SOURCE VOLTAGE V
GATE−SOURCE VOLTAGE V
2
2
DRAIN CURRENT I
4
4
I
25
8.0
⎪Y
D
I
D
100
– V
fs
– V
⎪ – I
1
GS
DS
D
6
6
T
Ｃ
= -55℃
T
D
Ｃ
100
25
= -55℃
(A)
GS
DS
8
8
V
(V)
(V)
ＧＳ
= 4.5V
5.75
5.25
6.0
5.5
5.0
10
10
10
3
10
5
4
3
2
1
0
8
6
4
2
0
0
0.5
0
30
10
5
3
1
0.1
COMMON SOURCE
Tc = 25°C
PULSE TEST
10
GATE−SOURCE VOLTAGE V
DRAIN−SOURCE VOLTAGE V
10
4
V GS = 10, 15 V
0.3
DRAIN CURRENT I
8.0
0.5
R
DS (ON)
20
V
8
DS
I
D
1
– V
– V
DS
– I
7.25
GS
12
30
D
D
7.0
6.75
COMMON SOURCE
T
PULSE TEST
(A)
Ｃ
3
= 25℃
GS
6.5
DS
16
5
40
6.0
(V)
COMMON
SOURCE
T
PULSE TEST
2009-09-29
I
(V)
Ｃ
Ｄ
V
2SK3757
= 25℃
= 2.0A
ＧＳ
5.5
1.0
0.5
= 5.0V
10
20
50