2SK3757(Q) Toshiba, 2SK3757(Q) Datasheet - Page 2

• Manufacturer Part Number: 2SK3757(Q)
• Description: MOSFET N-CH 450V 2A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3757(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.45 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.45 Ohm @10V
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 30 W
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Marking
Source-Drain Ratings and Characteristics
Gate leakage current
Gate -source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3757
Switching time
Characteristic
Characteristic
Part No. (or abbreviation code)
Lot No.
Note 4
Rise time
Turn-on time
Fall time
Turn-off time
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
G
D
GS
DS
DS
GS
DS
DS
DD
GS
= ±10 μA, V
= 10 mA, V
10 V
I
I
dI
0 V
DR
DR
= 450 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±25 V, V
= 10 V, I
∼ − 360 V, V
DR
2
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
= 2 A, V
= 2 A, V
/dt = 100 A/μs
(Ta = 25°C)
w
Test Condition
D
D
D
GS
= 10 μs
GS
DS
Test Condition
GS
= 1 mA
= 1 A
DS
= 1 A
GS
GS
GS
= 0 V
= 0 V, f = 1 MHz
I
= 0 V
D
= 0 V
= 0 V
= 10 V, I
= 0 V
= 0 V,
= 1 A
⎯
⎯
V
DD
D
R
∼ − 200 V
= 2 A
L
= 200 Ω
V
OUT
0.28
450
Min
±30
Min
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1000
Typ.
Typ.
330
1.9
1.0
5.0
45
15
25
20
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
9
5
4
2009-09-29
2SK3757
2.45
−1.5
Max
Max
±10
100
4.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
5
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V