2SK3757(Q) Toshiba, 2SK3757(Q) Datasheet - Page 4

• Manufacturer Part Number: 2SK3757(Q)
• Description: MOSFET N-CH 450V 2A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3757(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.45 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.45 Ohm @10V
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 30 W
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
10
10
1
50
40
30
20
10
8
6
4
2
0
−80
0
0.1
0
COMMON SOURCE
V
f = 1MHz
Tc = 25℃
COMMON SOURCE
V GS = 10 V
PULSE TEST
ＧＳ
= 0V
−40
CASE TEMPERATURE Tc
CASE TEMPERATURE Tc
DRAIN−SOURCE VOLTAGE V
40
CAPACITANCE – V
0
R
1
80
DS (ON)
P
D
40
– Tc
– Tc
120
80
I D = 2 A
10
DS
(°C)
160
(°C)
120
DS
1.0
0.5
(V)
160
200
Ciss
Coss
Crss
100
4
0.03
0.01
500
400
300
200
100
0.3
0.1
10
−80
3
1
5
4
3
2
1
0
0
0
0
COMMON SOURCE
Tc = 25°C
PULSE TEST
V DS
DRAIN−SOURCE VOLTAGE V
2
−40
TOTAL GATE CHARGE Q
−0.2
CASE TEMPERATURE Tc
10
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
4
0
3
−0.4
I
DR
V
V GS
6
th
– V
40
90
– Tc
1
180
DS
−0.6
8
V DS = 360 V
COMMON SOURCE
I D = 2 A
Tc = 25°C
PULSE TEST
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
80
V GS = 0, −1 V
10
g
DS
−0.8
(nC)
(°C)
120
(V)
12
2009-09-29
2SK3757
−1.0
160
14
20
16
12
8
4
0