TPC6109-H(TE85L,F) Toshiba, TPC6109-H(TE85L,F) Datasheet - Page 6

• Manufacturer Part Number: TPC6109-H(TE85L,F)
• Description: MOSFET P-CH 30V 5A VS-6
• Manufacturer: Toshiba

Specifications of TPC6109-H(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 12.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pf @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 2-3T1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC6109-HTE85LFTR

−100
−0.1
−10
−1
−0.1
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature
I D max (pulsed)*
Ta = 25°C
Drain-source voltage V
Safe operating area
1000
300
100
−1
0.3
0.1
30
10
0.001
3
1
10 ms*
0.01
−10
DS
1 ms*
(V)
V DSS max
Device mounted on a glass-
epoxy board (b) (Note 2b)
0.1
−100
Pulse width t
r
th
6
– t
1
w
w
Device mounted on a glass-
epoxy board (a) (Note 2a)
(s)
10
100
Single pulse
1000
2006-11-17
TPC6105