TPC6109-H(TE85L,F) Toshiba, TPC6109-H(TE85L,F) Datasheet
TPC6109-H(TE85L,F)
Specifications of TPC6109-H(TE85L,F)
Related parts for TPC6109-H(TE85L,F)
TPC6109-H(TE85L,F) Summary of contents
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...
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Marking (Note 5) Lot code (month) S3E Part No. (or abbreviation code) Pin #1 Lot code A line indicates (year) lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: ...
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I – −5 −2.5 −4 −4.5 −2.8 −4 −5 −3 −3.5 −1.8 −3 − −1.5 V −1 Common source Ta = 25°C Pulse test 0 −0.2 −0.4 −0.6 −0.8 0 Drain-source voltage V (V) ...
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R – (ON) 300 Common source −1.4 A Pulse test 250 −0 −1.8 V 200 −1 −2.7 A 150 −0.7 A 100 −2.5 V ...
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Safe operating area −100 I D max (pulsed)* −10 1 ms* 10 ms* −1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...