TPC6109-H(TE85L,F) Toshiba, TPC6109-H(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: TPC6109-H(TE85L,F)
• Description: MOSFET P-CH 30V 5A VS-6
• Manufacturer: Toshiba

Specifications of TPC6109-H(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 12.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pf @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 2-3T1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC6109-HTE85LFTR

100
−5
−4
−3
−2
−1
−5
−4
−3
−2
−1
10
−0.1
0
1
0
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−4.5
−0.2
−0.5
Drain-source voltage V
Gate-source voltage V
−5
−4
Drain current I
Ta = 100°C
−0.4
−1.0
Ta = 25°C
Ta = 25°C
I
I
|Y
D
D
fs
– V
– V
−3.5
−1
| – I
−3
DS
GS
−0.6
−1.5
D
−2.8
Ta = 100°C
Ta = −55°C
D
−2.5
Ta = −55°C
GS
Common source
Ta = 25°C
Pulse test
DS
(A)
V GS = −1.5 V
(V)
(V)
−0.8
−2.0
−1.8
−2
−1.0
−2.5
−10
4
1000
−1.0
−0.8
−0.6
−0.4
−0.2
−10
100
−8
−6
−4
−2
10
−0.1
0
0
0
0
−4.5
Common source
Ta = 25°C
Pulse test
−5
−0.7 A
−1
Drain-source voltage V
Gate-source voltage V
−2
−3.5
−4
Drain current I
−2.8
−3
R
−2
V
DS (ON)
I
DS
D
– V
−4
−1
– V
DS
GS
– I
−3
D
−1.8 V
D
V GS = −4.5 V
GS
Common source
Ta = 25°C
Pulse test
DS
(A)
−1.4 A
Common source
Ta = 25°C
Pulse test
−6
V GS = −1.5 V
(V)
(V)
I D = −2.7 A
−4
−2.5 V
2006-11-17
−2.5
−1.8
TPC6105
−2
−10
−5
−8