TPC6109-H(TE85L,F) Toshiba, TPC6109-H(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: TPC6109-H(TE85L,F)
• Description: MOSFET P-CH 30V 5A VS-6
• Manufacturer: Toshiba

Specifications of TPC6109-H(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 12.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 490pf @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 2-3T1A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPC6109-HTE85LFTR

Marking
(or abbreviation code)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on the lower left of the marking indicates Pin 1.
(Note 5)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
DD
Part No.
= −16 V, T
Pin #1
Lot code (month)
(a)
S3E
Lot code
ch
(year)
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
FR-4
(Unit: mm)
Product-specific code
3
G
= 25 Ω, I
AR
= −1.35A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
2006-11-17
TPC6105