IXFB30N120P IXYS, IXFB30N120P Datasheet - Page 5

• Manufacturer Part Number: IXFB30N120P
• Description: MOSFET N-CH 1200V 30A PLUS264
• Manufacturer: IXYS
• Series: PolarVHV™r

Specifications of IXFB30N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 310nC @ 10V
• Input Capacitance (ciss) @ Vds: 22500pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 1250 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.35
• Ciss, Typ, (pf): 22500
• Qg, Typ, (nc): 310
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.1
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFB30N120P
Fig. 12. Maximum Transient Thermal Impedance
1.000
Fig. 13. Maximum Transient Thermal Impedance
0.200
0.100
0.010
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
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IXYS REF: F_30N120P(97)2-12-10-D