IXFB30N120P IXYS, IXFB30N120P Datasheet - Page 4

no-image

IXFB30N120P

Manufacturer Part Number
IXFB30N120P
Description
MOSFET N-CH 1200V 30A PLUS264
Manufacturer
IXYS
Series
PolarVHV™r
Datasheet

Specifications of IXFB30N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
310nC @ 10V
Input Capacitance (ciss) @ Vds
22500pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
1250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
22500
Qg, Typ, (nc)
310
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.1
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB30N120P
Manufacturer:
TOSHIBA
Quantity:
10 000
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
100
30
25
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
0
4.0
0.3
0
f = 1 MHz
0.4
Fig. 9. Forward Voltage Drop of Intrinsic Diode
4.5
5
0.5
5.0
10
0.6
C rss
Fig. 7. Input Admittance
Fig. 11. Capacitance
5.5
15
0.7
T
V
J
C oss
DS
V
V
= 125ºC
GS
SD
- Volts
T
6.0
0.8
20
- Volts
- Volts
J
C iss
= 125ºC
- 40ºC
25ºC
0.9
6.5
25
T
1.0
J
= 25ºC
7.0
30
1.1
7.5
35
1.2
8.0
1.3
40
100
0.1
16
14
12
10
10
35
30
25
20
15
10
1
5
0
8
6
4
2
0
10
0
0
R
DS
T
Tc = 25ºC
Single Pulse
V
I
I
J
D
G
DS
(on) Limit
= 150ºC
= 15A
= 10mA
50
= 600V
Fig. 12. Forward-Bias Safe Operating Area
5
100
Fig. 8. Transconductance
100
150
10
Fig. 10. Gate Charge
Q
G
- NanoCoulombs
I
200
D
V
DS
- Amperes
15
- Volts
IXFB30N120P
250
DC
1,000
300
20
T
J
1ms
100µs
10ms
100ms
= - 40ºC
350
25ºC
25
125ºC
400
10,000
450
30

Related parts for IXFB30N120P