IXFB30N120P IXYS, IXFB30N120P Datasheet - Page 2

• Manufacturer Part Number: IXFB30N120P
• Description: MOSFET N-CH 1200V 30A PLUS264
• Manufacturer: IXYS
• Series: PolarVHV™r

Specifications of IXFB30N120P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 6.5V @ 1mA
• Gate Charge (qg) @ Vgs: 310nC @ 10V
• Input Capacitance (ciss) @ Vds: 22500pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.35 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 1250 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 30
• Rds(on), Max, Tj=25°c, (?): 0.35
• Ciss, Typ, (pf): 22500
• Qg, Typ, (nc): 310
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.1
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
R
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Q
I
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
Gi
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Resistive Switching Times
V
R
I
-di/dt = 100A/μs
V
Test Conditions
V
V
Gate Input Resistance
V
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
F
F
GS
R
DS
GS
G
GS
GS
= 0.5 • I
= I
= 100V
= 10V, V
= 1Ω (External)
= 0V
= 20V, I
= 10V, V
S
= 0V, V
, V
GS
D25
= 0V, Note 1
, V
D
DS
DS
DS
= 0.5 • I
GS
= 0.5 • V
= 25V, f = 1MHz
4,835,592
4,881,106
= 0.5 • V
= 0V
D25
DSS
, Note 1
4,931,844
5,017,508
5,034,796
DSS
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
13
Characteristic Values
Min.
Typ.
6,162,665
6,259,123 B1
6,306,728 B1
22.5
1.64
0.13
950
310
104
137
22
28
56
57
60
95
Typ.
1.6
14
0.10 °C/W
Max.
Max.
6,404,065 B1
6,534,343
6,583,505
120
300 ns
30
1.5
°C/W
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
Ω
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS264
6,727,585
6,771,478 B2 7,071,537
IXFB30N120P
TM
(IXFB) Outline
7,005,734 B2
7,063,975 B2
7,157,338B2