IXFB30N120P IXYS, IXFB30N120P Datasheet

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IXFB30N120P

Manufacturer Part Number
IXFB30N120P
Description
MOSFET N-CH 1200V 30A PLUS264
Manufacturer
IXYS
Series
PolarVHV™r
Datasheet

Specifications of IXFB30N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
350 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
310nC @ 10V
Input Capacitance (ciss) @ Vds
22500pF @ 25V
Power - Max
1250W
Mounting Type
Through Hole
Package / Case
3-PLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.35 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
1250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.35
Ciss, Typ, (pf)
22500
Qg, Typ, (nc)
310
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
1250
Rthjc, Max, (ºc/w)
0.1
Package Style
PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFB30N120P
Manufacturer:
TOSHIBA
Quantity:
10 000
Polar
Power MOSFET
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
F
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2010 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
TM
HiPerFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque
Test Conditions
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
DM
, V
GS
DSS
, I
D
, V
DD
D
D
= 3mA
= 1mA
= 0.5 • I
≤ V
GS
DS
= 0V
DSS
= 0V
TM
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXFB30N120P
30..120/6.7..27
Characteristic Values
1200
-55 ... +150
-55 ... +150
Min.
3.5
Maximum Ratings
1200
1200
1250
± 30
± 40
150
300
260
Typ.
2.0
10
30
75
15
15
± 300
Max.
350 mΩ
6.5
5.0 mA
50
N/lb.
V/ns
nA
μA
°C
°C
°C
°C
°C
W
g
V
V
V
V
A
A
A
V
V
J
V
I
R
t
PLUS264
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
Fast Intrinsic Diode
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
High Voltage Switch-Mode and
Resonant-Mode Power Supplies
High Voltage Pulse Power
High Voltage Discharge Circuits in
Laser Pulsers
Spark Igniters, RF Generators
High Voltage DC-DC Coverters
High Voltage DC-AC Inverters
Applications
Plus 264
Mounting
DS(on)
DSS
G
D
S
DS(ON)
TM
TM
= 1200V
= 30A
≤ ≤ ≤ ≤ ≤ 350mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
Package for Clip or Spring
and Q
D
Tab = Drain
G
= Drain
Tab
DS99825B(02/10)

Related parts for IXFB30N120P

IXFB30N120P Summary of contents

Page 1

... D = ± 30V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2010 IXYS CORPORATION, All Rights Reserved IXFB30N120P Maximum Ratings 1200 = 1MΩ 1200 GS ± 30 ± 2.0 ≤ 150° 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 Characteristic Values Min. Typ. ...

Page 2

... I = 0.5 • I 104 DSS D D25 137 0.13 Characteristic Values Min. Typ. JM 1.6 14 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFB30N120P PLUS264 (IXFB) Outline TM Max Ω 0.10 °C/W °C/W Max 120 A 1.5 V 300 ns μC A 6,404,065 B1 ...

Page 3

... V = 10V GS 8V 2.6 2.2 7V 1.8 1.4 1.0 6V 0 15A Value vs 125º 25º IXFB30N120P Fig. 2. Extended Output Characteristics @ Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 5 0 -50 - Degrees Centigrade C = 25ºC ...

Page 4

... C rss Volts DS IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. = 125ºC J 25ºC - 40ºC 6.5 7.0 7.5 8.0 - Volts T = 25ºC J 0.9 1.0 1.1 1.2 1.3 - Volts C iss IXFB30N120P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 600V 15A 10mA ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 12. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXFB30N120P 0 IXYS REF: F_30N120P(97)2-12-10-D ...

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