STW45NM50FD STMicroelectronics, STW45NM50FD Datasheet - Page 11

• Manufacturer Part Number: STW45NM50FD
• Description: MOSFET N-CH 500V 45A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW45NM50FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2718-5

STW45NM50FD
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Revision history
Table 9.
05-Apr-2005
26-Apr-2006
23-Jul-2009
Date
Document revision history
Revision
10
8
9
Modified value on
New template
Modified values on
Doc ID 7955 Rev 10
Source drain diode
Switching times
Changes
Revision history
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