STW45NM50FD STMicroelectronics, STW45NM50FD Datasheet

MOSFET N-CH 500V 45A TO-247

STW45NM50FD

Manufacturer Part Number
STW45NM50FD
Description
MOSFET N-CH 500V 45A TO-247
Manufacturer
STMicroelectronics
Series
FDmesh™r
Datasheet

Specifications of STW45NM50FD

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 22.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
45 A
Power Dissipation
417000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2718-5

Available stocks

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Quantity
Price
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STW45NM50FD
Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
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Quantity:
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Features
Application
Description
The FDmesh™ associates all advantages of
reduced on-resistance and fast switching with an
intrinsic fast-recovery body diode. It is therefore
strongly recommended for bridge topologies, in
particular ZVS phase-shift converters.
Table 1.
July 2009
STW45NM50FD
100% avalanche tested
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STW45NM50FD
Type
Order code
Device summary
500 V
V
DSS
R
< 0.1 Ω
W45NM50FD
max
DS(on)
Marking
FDmesh™ Power MOSFET (with fast diode)
Doc ID 7955 Rev 10
45 A
N-channel 500 V, 0.07 Ω, 45 A, TO-247
I
D
Figure 1.
Package
TO-247
Internal schematic diagram
STW45NM50FD
TO-247
1
2
Packaging
3
Tube
www.st.com
1/12
12

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STW45NM50FD Summary of contents

Page 1

... Table 1. Device summary Order code STW45NM50FD July 2009 N-channel 500 V, 0.07 Ω TO-247 FDmesh™ Power MOSFET (with fast diode) R DS(on max < 0.1 Ω Figure 1. Marking Package W45NM50FD Doc ID 7955 Rev 10 STW45NM50FD TO-247 Internal schematic diagram Packaging TO-247 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 7955 Rev 10 STW45NM50FD ...

Page 3

... STW45NM50FD 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope T Operating junction temperature J T Storage temperature stg 1 ...

Page 4

... Parameter Test conditions V >I DS D(on 22 =25 V, f=1 MHz = 400 = Figure 14 f=1 MHz Gate DC Bias= 0 test signal level = 20 mV open drain DSS Doc ID 7955 Rev 10 STW45NM50FD Min. Typ 500 GS = 250 µ 22.5 A 0.07 D Min. Typ DS(on)max - 20 3600 =0 - 1260 400 V - 350 = oss Max. ...

Page 5

... STW45NM50FD Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Off-voltage rise time r(Voff) t Fall time f t Cross-over time c Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance Doc ID 7955 Rev 10 STW45NM50FD ...

Page 7

... STW45NM50FD Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Doc ID 7955 Rev 10 Electrical characteristics 7/12 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 7955 Rev 10 STW45NM50FD 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

Page 9

... STW45NM50FD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 7955 Rev 10 Package mechanical data ® 9/12 ...

Page 10

... Package mechanical data Dim ø P ø 10/12 TO-247 Mechanical data mm. Min. Typ Doc ID 7955 Rev 10 STW45NM50FD Max ...

Page 11

... STW45NM50FD 5 Revision history Table 9. Document revision history Date 05-Apr-2005 26-Apr-2006 23-Jul-2009 Revision Source drain diode 8 Modified value on 9 New template Switching times 10 Modified values on Doc ID 7955 Rev 10 Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 7955 Rev 10 STW45NM50FD ...

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