STW45NM50FD STMicroelectronics, STW45NM50FD Datasheet - Page 10

• Manufacturer Part Number: STW45NM50FD
• Description: MOSFET N-CH 500V 45A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW45NM50FD

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 22.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 417W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 417000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2718-5

Package mechanical data
10/12
Dim.
ø
A
ø
b
b
L
L
A
D
E
S
b
e
L
c
R
P
1
2
1
2
1
1
1
1
Min.
4
2
0
3
3
4
1
2
3
9
5
4
8 .
2 .
4 .
7 .
5 .
5 .
0 .
0 .
0 .
8 .
4 .
2 .
5
0
0
0
5
0
5
5
0
Doc ID 7955 Rev 10
TO-247 Mechanical data
1
mm.
5
5
Typ
8
4 .
5 .
5 .
5
0
0
STW45NM50FD
2
1
1
Max.
5
2
1
2
3
0
4
3
5
0
5
4
1 .
6 .
4 .
4 .
4 .
8 .
3 .
6 .
5 .
1 .
7 .
8 .
5
0
0
0
0
0
0
5
0
5
5
0