IRFPS3810PBF International Rectifier, IRFPS3810PBF Datasheet - Page 7
![MOSFET N-CH 100V 170A SUPER247](/photos/5/41/54106/21-super-247_sml.jpg)
IRFPS3810PBF
Manufacturer Part Number
IRFPS3810PBF
Description
MOSFET N-CH 100V 170A SUPER247
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFPS3810PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
390nC @ 10V
Input Capacitance (ciss) @ Vds
6790pF @ 25V
Power - Max
580W
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Current, Drain
170 A
Gate Charge, Total
260 nC
Package Type
Super-247™
Polarization
N-Channel
Power Dissipation
580 W
Resistance, Drain To Source On
0.009 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
24 ns
Transconductance, Forward
52 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
141 A
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
140 ns
Gate Charge Qg
260 nC
Minimum Operating Temperature
- 55 C
Rise Time
270 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFPS3810PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFPS3810PBF
Manufacturer:
IR
Quantity:
5 203
Part Number:
IRFPS3810PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
*
Fig 14. For N-Channel HEXFET
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
®
D =
-
Power MOSFETs
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
*
7