IRFPS3810PBF International Rectifier, IRFPS3810PBF Datasheet
![MOSFET N-CH 100V 170A SUPER247](/photos/5/41/54106/21-super-247_sml.jpg)
IRFPS3810PBF
Manufacturer Part Number
IRFPS3810PBF
Description
MOSFET N-CH 100V 170A SUPER247
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFPS3810PBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
390nC @ 10V
Input Capacitance (ciss) @ Vds
6790pF @ 25V
Power - Max
580W
Mounting Type
Through Hole
Package / Case
Super-247-3 (Straight Leads)
Current, Drain
170 A
Gate Charge, Total
260 nC
Package Type
Super-247™
Polarization
N-Channel
Power Dissipation
580 W
Resistance, Drain To Source On
0.009 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
45 ns
Time, Turn-on Delay
24 ns
Transconductance, Forward
52 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±30 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 m Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
141 A
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Fall Time
140 ns
Gate Charge Qg
260 nC
Minimum Operating Temperature
- 55 C
Rise Time
270 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFPS3810PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFPS3810PBF
Manufacturer:
IR
Quantity:
5 203
Part Number:
IRFPS3810PBF
Manufacturer:
IR
Quantity:
20 000
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Description
The HEXFET
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θCS
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
@T
C
C
C
= 25°C
= 100°C
= 25°C
®
Power MOSFETs from International
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G
IRFPS3810PbF
Typ.
300 (1.6mm from case )
0.24
–––
–––
HEXFET
-55 to + 175
D
S
170
120
Max.
1350
670
580
± 30
100
3.8
2.3
58
®
R
Power MOSFET
DS(on)
V
Max.
I
0.26
–––
D
40
DSS
Super-247™
= 170A
= 0.009Ω
= 100V
PD - 95703
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1
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IRFPS3810PBF Summary of contents
Page 1
... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA IRFPS3810PbF HEXFET Max. @ 10V 170 10V 120 GS 1350 - 175 300 (1.6mm from case ) Typ. ––– ...
Page 2
Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
Page 3
Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information ...