IRFPS3810PBF International Rectifier, IRFPS3810PBF Datasheet
IRFPS3810PBF
Specifications of IRFPS3810PBF
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IRFPS3810PBF Summary of contents
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... J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA www.irf.com IRFPS3810PbF HEXFET Max. @ 10V 170† 10V 120† GS 1350 - 175 300 (1.6mm from case ) Typ. ––– ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...
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VGS TOP 15V 12V 10V 8.0V 7.0V 100 6.0V 5.5V BOTTOM 5. 5.0V 0.1 50µs PULSE WIDTH 0.01 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 ...
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0V MHZ C iss = rss = oss = 10000 Ciss 5000 Coss Crss 0 1 ...
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LIMITED BY PACKAGE 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE ...
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D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...
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D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * Fig 14. For N-Channel HEXFET www.irf.com + • • ƒ • - „ ...
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Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information ...