IRFPS3810PBF International Rectifier, IRFPS3810PBF Datasheet - Page 4

• Manufacturer Part Number: IRFPS3810PBF
• Description: MOSFET N-CH 100V 170A SUPER247
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFPS3810PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 390nC @ 10V
• Input Capacitance (ciss) @ Vds: 6790pF @ 25V
• Power - Max: 580W
• Mounting Type: Through Hole
• Package / Case: Super-247-3 (Straight Leads)
• Current, Drain: 170 A
• Gate Charge, Total: 260 nC
• Package Type: Super-247™
• Polarization: N-Channel
• Power Dissipation: 580 W
• Resistance, Drain To Source On: 0.009 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 45 ns
• Time, Turn-on Delay: 24 ns
• Transconductance, Forward: 52 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±30 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 141 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 140 ns
• Gate Charge Qg: 260 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 270 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFPS3810PBF

4
1000
100
15000
10000
10
5000
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0
1
Drain-to-Source Voltage
T = 175 C
J
V
SD
V DS , Drain-to-Source Voltage (V)
0.8
,Source-to-Drain Voltage (V)
Forward Voltage
°
T = 25 C
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
J
1.4
= C gs + C gd , C ds
Ciss
°
Coss
Crss
10
f = 1 MHZ
2.0
V
GS
SHORTED
= 0 V
2.6
100
10000
1000
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
Fig 6. Typical Gate Charge Vs.
I =
1
D
Tc = 25°C
Tj = 175°C
Single Pulse
100A
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
Q , Total Gate Charge (nC)
100
G
V
V
V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
DS
DS
DS
= 80V
= 50V
= 20V
200
FOR TEST CIRCUIT
SEE FIGURE
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100
10msec
100µsec
1msec
300
13
1000
400