STP20NM50 STMicroelectronics, STP20NM50 Datasheet - Page 5
![MOSFET N-CH 500V 20A TO-220](/photos/1/39/13943/to-220_sml.jpg)
STP20NM50
Manufacturer Part Number
STP20NM50
Description
MOSFET N-CH 500V 20A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB20NM50-1.pdf
(14 pages)
Specifications of STP20NM50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
1480pF @ 25V
Power - Max
192W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
192000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2663-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP20NM50
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STP20NM50
Manufacturer:
STMicroelectronics
Quantity:
1 876
Company:
Part Number:
STP20NM505
Manufacturer:
ST
Quantity:
12 500
Company:
Part Number:
STP20NM50FP
Manufacturer:
ST
Quantity:
45 050
Part Number:
STP20NM50FP
Manufacturer:
ST
Quantity:
20 000
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration 300µs duty cycle 1.5%
Symbol
Symbol
I
V
t
SDM
t
t
r(Voff)
I
I
d(on)
d(off)
SD
RRM
RRM
I
Q
Q
t
t
SD
t
t
t
t
c
r
f
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 14)
V
R
(see Figure 16)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
DD
DD
DD
DD
G
G
=4.7Ω, V
=4.7Ω, V
=20A, V
=20A,di/dt=100A/µs,
=20A,di/dt=100A/µs,
Test conditions
Test conditions
=250 V, I
=400 V, I
=100 V, Tj= 25°C
=100 V, Tj=150°C
GS
GS
GS
D
D
=0
=10A,
=20A,
=10V
=10V
Min.
Min.
Electrical characteristics
Typ.
Typ.
350
435
8.5
4.6
5.9
24
16
40
12
23
26
27
9
Max.
Max
1.5
20
80
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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