STP20NM50 STMicroelectronics, STP20NM50 Datasheet - Page 4

• Manufacturer Part Number: STP20NM50
• Description: MOSFET N-CH 500V 20A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP20NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1480pF @ 25V
• Power - Max: 192W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 192000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2663-5

Electrical characteristics
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4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C
V
Symbol
Symbol
C
R
CASE
V
(BR)DSS
g
C
I
I
oss eq.
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
fs
Rg
Q
(2)
oss
oss eq.
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
V
I
V
V
V
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
V
V
(see Figure 15)
I
V
V
V
V
V
D
D
GS
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 10A
= 250µA, V
=0
=0, V
=400V, I
= V
= 10 V, I
> I
=25V, f=1 MHz,
=10V
= Max rating,
= Max rating @125°C
= ±30V
Test conditions
Test conditions
D(ON)
GS
DS
, I
D
=0V to 400V
D
D
x R
= 10 A
GS
= 250 µA
= 20A
DS(ON)max,
= 0
Min.
Min.
500
3
1480
Typ.
Typ.
0.20
285
130
1.6
10
34
40
13
19
4
oss
Max.
Max.
±
0.25
100
56
when V
10
1
5
DS
Unit
Unit
µA
µA
µA
nC
nC
nC
pF
pF
pF
pF
V
V
Ω
S
Ω