STP20NM50 STMicroelectronics, STP20NM50 Datasheet - Page 11
STP20NM50
Manufacturer Part Number
STP20NM50
Description
MOSFET N-CH 500V 20A TO-220
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB20NM50-1.pdf
(14 pages)
Specifications of STP20NM50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
1480pF @ 25V
Power - Max
192W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
192000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2663-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP20NM50
Manufacturer:
ST
Quantity:
10 000
Company:
Part Number:
STP20NM50
Manufacturer:
STMicroelectronics
Quantity:
1 876
Company:
Part Number:
STP20NM505
Manufacturer:
ST
Quantity:
12 500
Company:
Part Number:
STP20NM50FP
Manufacturer:
ST
Quantity:
45 050
Part Number:
STP20NM50FP
Manufacturer:
ST
Quantity:
20 000
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
DIM.
L20
L30
H1
øP
b1
e1
L1
J1
A
D
E
Q
b
c
e
F
L
15.25
MIN.
4.40
0.61
1.15
0.49
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
TO-220 MECHANICAL DATA
16.40
28.90
mm.
TYP
MAX.
15.75
10.40
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14
0.173
0.024
0.045
0.019
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
MIN.
0.60
Package mechanical data
0.645
1.137
TYP.
inch
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
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