STW52NK25Z STMicroelectronics, STW52NK25Z Datasheet - Page 2

• Manufacturer Part Number: STW52NK25Z
• Description: MOSFET N-CH 250V 52A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW52NK25Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 52A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 4850pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 52 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 26A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 33mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4428-5

STW52NK25Z
2/10
Table 3: Absolute Maximum ratings
( ) Pulse width limited by safe operating area
(1) I
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Table 6: GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
V
Rthj-case
Rthj-amb
Symbol
Symbol
Symbol
dv/dt (1)
SD
BV
I
ESD(G-S)
V
DM
P
V
V
E
T
I
DGR
TOT
I
I
T
AR
T
DS
GS
stg
AS
GSO
D
D
52A, di/dt 200A/µs, V
j
l
( )
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Gate-Source Breakdown
Voltage
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
j
DD
= 25 °C, I
V
(BR)DSS
D
C
GS
Parameter
Parameter
= I
= 25°C
, T
GS
j
= 20 k )
max)
AR
j
= 0)
, V
T
Igs=± 1mA (Open Drain)
JMAX.
DD
C
C
= 25°C
= 100°C
Test Conditions
= 50 V)
Min.
30
Max Value
-55 to 150
Value
32.76
0.42
6000
300
Typ.
± 30
2.38
250
250
208
300
500
30
4.5
52
52
Max.
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
°C
mJ
°C
W
V
V
V
A
A
A
V
A
V