STW52NK25Z STMicroelectronics, STW52NK25Z Datasheet

MOSFET N-CH 250V 52A TO-247

STW52NK25Z

Manufacturer Part Number
STW52NK25Z
Description
MOSFET N-CH 250V 52A TO-247
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STW52NK25Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 26A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
52A
Vgs(th) (max) @ Id
4.5V @ 150µA
Gate Charge (qg) @ Vgs
160nC @ 10V
Input Capacitance (ciss) @ Vds
4850pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
52 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
26A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
33mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4428-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
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STW52NK25Z
Manufacturer:
ST
Quantity:
4 250
Part Number:
STW52NK25Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STW52NK25Z
Manufacturer:
ST
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Part Number:
STW52NK25Z,W52NK25Z
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ST
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Part Number:
STW52NK25Z,W52NK25Z,
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November 2004
Table 1: General Features
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
APPLICATIONS
Table 2: Order Codes
STW52NK25Z
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING
REPEATIBILITY
HIGH CURRENT, HIGH SPEED SWITCHING
DC CHOPPERs
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
TYPE
STW52NK25Z
SALES TYPE
DS
(on) = 0.033
250 V
V
DSS
< 0.045
R
DS(on)
W52NK25Z
MARKING
N-CHANNEL 250V - 0.033 - 52A TO-247
Zener-Protected SuperMESH™ MOSFET
52 A
I
D
300 W
Pw
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
TO-247
STW52NK25Z
TO-247
PACKAGING
1
TUBE
2
Rev. 2
3
1/10

Related parts for STW52NK25Z

STW52NK25Z Summary of contents

Page 1

... IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC Table 2: Order Codes SALES TYPE STW52NK25Z November 2004 N-CHANNEL 250V - 0.033 - 52A TO-247 Zener-Protected SuperMESH™ MOSFET Figure 1: Package I Pw DS(on 300 W Figure 2: Internal Schematic Diagram MARKING PACKAGE W52NK25Z STW52NK25Z 1 TO-247 PACKAGING TO-247 3 2 TUBE Rev. 2 1/10 ...

Page 2

... STW52NK25Z Table 3: Absolute Maximum ratings Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor V Gate source ESD(HBM-C=100pF, R=1.5K ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... 10V GS Test Conditions di/dt = 100A/µ 100 25° (see Figure 18 di/dt = 100A/µ 100 150° (see Figure 18) STW52NK25Z Min. Typ. Max. 250 = 125 °C ±10 3 3.75 0.033 0.045 Min. Typ. Max 4850 GS 855 222 720 40 75 115 55 160 32 87 Min. ...

Page 4

... STW52NK25Z Figure 3: Safe Operating Area Figure 4: Output Characteristics Figure 5: Transconductance 4/10 Figure 6: Thermal Impedance Figure 7: Transfer Characteristics Figure 8: Static Drain-source On Resistance ...

Page 5

... Figure 9: Gate Charge vs Gate-source Voltage Figure 10: Normalized Gate Thereshold Volt- age vs Temperature Figure 11: Source-Drain Diode Forward Char- acteristics Figure 12: Capacitance Variations Figure 13: Normalized On Resistance vs Tem- perature Figure 14: Normalized BVdss vs Temperature STW52NK25Z 5/10 ...

Page 6

... STW52NK25Z Figure 15: Avalanche Energy vs Starting Tj 6/10 ...

Page 7

... Figure 16: Unclamped Inductive Load Test Cir- cuit Figure 17: Switching Times Test Circuit For Resistive Load Figure 18: Test Circuit For Inductive Load Switching and Diode Recovery Times Figure 19: Unclamped Inductive Wafeform Figure 20: Gate Charge Test Circuit STW52NK25Z 7/10 ...

Page 8

... STW52NK25Z DIM. MIN. A 4.85 A1 2.20 b 1.0 b1 2.0 b2 3.0 c 0.40 D 19.85 E 15. 14.20 L1 3.70 L2 øP 3.55 øR 4.50 S 8/10 TO-247 MECHANICAL DATA mm. TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 5.45 14.80 4.30 18.50 3.65 5.50 5.50 inch MIN. TYP. ...

Page 9

... Table 10: Revision History Date Revision 29-Oct-2004 1 22-Nov-2004 2 Description of Changes First Relase Final datasheet STW52NK25Z 9/10 ...

Page 10

... STW52NK25Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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